Martin Magnusson
Director of Bachelor's and Master's Studies
Doping of GaAsP nanowires grown by aerotaxy
Author
Summary, in English
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]
The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.
Department/s
- Solid State Physics
- NanoLund: Centre for Nanoscience
- Centre for Analysis and Synthesis
Publishing year
2019-07-01
Language
English
Document type
Conference paper: abstract
Topic
- Nano Technology
- Condensed Matter Physics
Conference name
21th International Vacuum Congress
Conference date
2019-07-01 - 2019-07-05
Conference place
Malmö, Sweden
Status
Published