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Martin Magnusson

Director of Bachelor's and Master's Studies

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From diffusion limited to incorporation limited growth of nanowires

Author

  • Jonas Johansson
  • Martin H. Magnusson

Summary, in English

We propose a model for the axial growth rate of nanowires grown by means of the vapor-liquid-solid mechanism. Our model is based on deposition-desorption-incorporation kinetics in steady state, and using this model we discuss nanowire growth in two experimentally relevant limits: mass transport limited growth and incorporation limited growth. We discuss our modeling results in view of experimental nanowire growth results with a special emphasis on the radius-independent, incorporation limited growth rate in the high pressure limit, observed under specific, extreme conditions of nanowire growth.

Department/s

  • Solid State Physics
  • NanoLund: Centre for Nanoscience

Publishing year

2019

Language

English

Publication/Series

Journal of Crystal Growth

Volume

525

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Nano Technology

Keywords

  • A1. Nanostructures
  • A3. Vapor phase epitaxy
  • B1. Nanomaterials
  • B2. Semiconducting III-V materials

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248