Martin Magnusson
Director of Bachelor's and Master's Studies
From diffusion limited to incorporation limited growth of nanowires
Author
Summary, in English
We propose a model for the axial growth rate of nanowires grown by means of the vapor-liquid-solid mechanism. Our model is based on deposition-desorption-incorporation kinetics in steady state, and using this model we discuss nanowire growth in two experimentally relevant limits: mass transport limited growth and incorporation limited growth. We discuss our modeling results in view of experimental nanowire growth results with a special emphasis on the radius-independent, incorporation limited growth rate in the high pressure limit, observed under specific, extreme conditions of nanowire growth.
Department/s
- Solid State Physics
- NanoLund: Centre for Nanoscience
Publishing year
2019
Language
English
Publication/Series
Journal of Crystal Growth
Volume
525
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
- Nano Technology
Keywords
- A1. Nanostructures
- A3. Vapor phase epitaxy
- B1. Nanomaterials
- B2. Semiconducting III-V materials
Status
Published
ISBN/ISSN/Other
- ISSN: 0022-0248