Martin Magnusson
Director of Bachelor's and Master's Studies
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
Author
Summary, in English
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.
Department/s
- Solid State Physics
- Department of Electrical and Information Technology
Publishing year
2002
Language
English
Pages
1433-1440
Publication/Series
Solid-State Electronics
Volume
46
Issue
9
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Keywords
- image force
- silicon carbide
- nano-particles
- Schottky barrier height
- lowering
Status
Published
ISBN/ISSN/Other
- ISSN: 0038-1101