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Martin Magnusson

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GaAsP Nanowires Grown by Aerotaxy

Author

  • Wondwosen Metaferia
  • Axel R. Persson
  • Kilian Mergenthaler
  • Fangfang Yang
  • Wei Zhang
  • Arkady Yartsev
  • Reine Wallenberg
  • Mats Erik Pistol
  • Knut Deppert
  • Lars Samuelson
  • Martin H. Magnusson
Show all

Summary, in English

We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires.

Department/s

  • Solid State Physics
  • NanoLund: Centre for Nanoscience
  • Chemical Physics

Publishing year

2016-09-14

Language

English

Pages

5701-5707

Publication/Series

Nano Letters

Volume

16

Issue

9

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology
  • Condensed Matter Physics

Keywords

  • Aerotaxy
  • GaAsP nanowires
  • gas phase
  • zincblende

Status

Published

Research group

  • nCHREM/ Reine Wallenberg

ISBN/ISSN/Other

  • ISSN: 1530-6984