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Tommy Holmqvist

Forskningsingenjör

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Double oxidation scheme for tunnel junction fabrication

Författare

  • T. Holmqvist
  • M. Meschke
  • J. P. Pekola

Summary, in English

The authors report a method to achieve Al-Al Ox -Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68 fFμ m2. These junctions, employed in low temperature measurements and applications, demonstrate expected and stable conductance characteristics. The double oxidation method is straightforward to implement in a basic setup for tunnel junction fabrication.

Publiceringsår

2008

Språk

Engelska

Sidor

28-31

Publikation/Tidskrift/Serie

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volym

26

Issue

1

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Status

Published

ISBN/ISSN/Övrigt

  • ISSN: 1071-1023