Martin Magnusson
Ställföreträdande prefekt & studierektor för grundutbildning
Doping of GaAsP nanowires grown by aerotaxy
Författare
Summary, in English
Controlled synthesis of GaAs(1-x)P(x) NWs with a bandgap ranging from 1.42 to 1.90 eV (at 300K) through the scalable Aerotaxy [4] technique has already been reported.[5]
The present work concerns doping of GaAsP NWs by controlling precursor (DEZn) flows during growth by Aerotaxy. Here we present structural, optical and electrical studies of doped GaAs(1-x)P(x) NWs by high-resolution TEM, Photoluminescence, 4-point probe and Hall measurements.
Avdelning/ar
- Fasta tillståndets fysik
- NanoLund: Centre for Nanoscience
- Centrum för analys och syntes
Publiceringsår
2019-07-01
Språk
Engelska
Dokumenttyp
Konferensbidrag: abstract
Ämne
- Nano Technology
- Condensed Matter Physics
Conference name
21th International Vacuum Congress
Conference date
2019-07-01 - 2019-07-05
Conference place
Malmö, Sweden
Status
Published