From diffusion limited to incorporation limited growth of nanowires

Summary, in English

We propose a model for the axial growth rate of nanowires grown by means of the vapor-liquid-solid mechanism. Our model is based on deposition-desorption-incorporation kinetics in steady state, and using this model we discuss nanowire growth in two experimentally relevant limits: mass transport limited growth and incorporation limited growth. We discuss our modeling results in view of experimental nanowire growth results with a special emphasis on the radius-independent, incorporation limited growth rate in the high pressure limit, observed under specific, extreme conditions of nanowire growth.

• Författare: Jonas Johansson; Martin H. Magnusson
• Avdelning/ar: Fasta tillståndets fysik; NanoLund: Centre for Nanoscience
• Publiceringsår: 2019
• Språk: Engelska
• Publikation/Tidskrift/Serie: Journal of Crystal Growth
• Volym: 525
• Länkar: http://dx.doi.org/10.1016/j.jcrysgro.2019.125192
• Dokumenttyp: Artikel i tidskrift
• Förlag: Elsevier
• Ämne: Condensed Matter Physics; Nano Technology
• Nyckelord: A1. Nanostructures; A3. Vapor phase epitaxy; B1. Nanomaterials; B2. Semiconducting III-V materials
• Status: Published
• ISBN/ISSN/Övrigt: ISSN: 0022-0248