Martin Magnusson
Ställföreträdande prefekt & studierektor för grundutbildning
Recombination dynamics in aerotaxy-grown Zn-doped GaAs nanowires
Författare
Summary, in English
In this paper we have investigated the dynamics of photo-generated charge carriers in a series of aerotaxy-grown GaAs nanowires (NWs) with different levels of Zn doping. Time-resolved photo-induced luminescence and transient absorption have been employed to investigate radiative (band edge transition) and non-radiative charge recombination processes, respectively. We find that the photo-luminescence (PL) lifetime of intrinsic GaAs NWs is significantly increased after growing an AlGaAs shell over them, indicating that an AlGaAs shell can effectively passivate the surface of aerotaxy-grown GaAs NWs. We observe that PL decay time as well as PL intensity decrease with increasing Zn doping, which can be attributed to thermally activated electron trapping with the trap density increased due to the Zn doping level.
Avdelning/ar
- Kemisk fysik
- Fasta tillståndets fysik
- NanoLund: Centre for Nanoscience
Publiceringsår
2016-10-07
Språk
Engelska
Publikation/Tidskrift/Serie
Nanotechnology
Volym
27
Issue
45
Länkar
Dokumenttyp
Artikel i tidskrift
Förlag
IOP Publishing
Ämne
- Nano Technology
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0957-4484