GaAsP Nanowires Grown by Aerotaxy

Summary, in English

We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH₃/AsH₃ ratio and growth temperature, size selected GaAs_1-xP_x nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires.

• Författare: Wondwosen Metaferia; Axel R. Persson; Kilian Mergenthaler; Fangfang Yang; Wei Zhang; Arkady Yartsev; Reine Wallenberg; Mats Erik Pistol; Knut Deppert; Lars Samuelson; Martin H. Magnusson
• Avdelning/ar: Fasta tillståndets fysik; NanoLund: Centre for Nanoscience; Kemisk fysik
• Publiceringsår: 2016-09-14
• Språk: Engelska
• Sidor: 5701-5707
• Publikation/Tidskrift/Serie: Nano Letters
• Volym: 16
• Issue: 9
• Fulltext: - 5 MB; Download statistics
• Länkar: http://dx.doi.org/10.1021/acs.nanolett.6b02367
• Dokumenttyp: Artikel i tidskrift
• Förlag: The American Chemical Society (ACS)
• Ämne: Nano Technology; Condensed Matter Physics
• Nyckelord: Aerotaxy; GaAsP nanowires; gas phase; zincblende
• Status: Published
• Forskningsgrupp: nCHREM/ Reine Wallenberg
• ISBN/ISSN/Övrigt: ISSN: 1530-6984